English
简体中文
MOSFET N-CH 800V 3A DPAK
CONN RCPT MALE 32POS GOLD CRIMP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SuperMESH™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 800 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 3.5Ohm @ 1.5A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 50µA |
| 栅极电荷 (qg) (max) @ vgs: | 22.5 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 575 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 80W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DPAK |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
ZVNL110GTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 600MA SOT223 |
|
SUD50P10-43L-BE3Vishay / Siliconix |
MOSFET P-CH 100V 9.2A/37.1A DPAK |
|
NTD4856N-1GRochester Electronics |
MOSFET N-CH 25V 13.3A/89A IPAK |
|
SSM3K48FU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 100MA USM |
|
NTP5860NLGRochester Electronics |
MOSFET N-CH 60V 220A TO220AB |
|
BTS282ZE3180AATMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRLL014NTRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 2A SOT223 |
|
IXTH52N65XWickmann / Littelfuse |
MOSFET N-CH 650V 52A TO247 |
|
STD35P6LLF6STMicroelectronics |
MOSFET P-CH 60V 35A DPAK |
|
NVMFS5C646NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 20A/93A 5DFN |
|
STB76NF75STMicroelectronics |
MOSFET N-CH 75V 80A D2PAK |
|
IRFF9231Rochester Electronics |
MOSFET N-CH 150V 4A TO205AF |
|
BUK7E3R1-40E,127Nexperia |
MOSFET N-CH 40V 100A I2PAK |