类型 | 描述 |
---|---|
系列: | UltraFET™ |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 12mOhm @ 75A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 84 nC @ 10 V |
vgs (最大值): | ±16V |
输入电容 (ciss) (max) @ vds: | 2.745 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 180W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D²PAK (TO-263AB) |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRLL014NPBFRochester Electronics |
MOSFET N-CH 55V 2A SOT223 |
|
MCU04N60-TPMicro Commercial Components (MCC) |
MOSFET N-CH 600V 4A DPAK |
|
FDA62N28Rochester Electronics |
MOSFET N-CH 280V 62A TO3PN |
|
5HN01C-TB-ERochester Electronics |
MOSFET N-CH 50V 100MA CP3 |
|
HUF75307D3ST_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMT10H072LFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 4A 6UDFN |
|
FDPF8N60ZUTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 6.5A TO220F |
|
SPS02N60C3BKMA1Rochester Electronics |
MOSFET N-CH 600V 1.8A TO251-31 |
|
FDT457NSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 5A SOT223-4 |
|
AUIRFSL8403Rochester Electronics |
MOSFET N-CH 40V 123A TO262 |
|
IPP60R160P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 20A TO220-3-1 |
|
IPB036N12N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 120V 180A TO263-7 |
|
STP10NM60NSTMicroelectronics |
MOSFET N-CH 600V 10A TO220AB |