类型 | 描述 |
---|---|
系列: | QFET® |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 12A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 650mOhm @ 6A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 63 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 2.29 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 3.13W (Ta), 225W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | I2PAK (TO-262) |
包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPZA60R060P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 48A TO247-4 |
|
SFS9634Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
PMZ290UNE2YLNexperia |
MOSFET N-CH 20V 1.2A DFN1006-3 |
|
FQP6N50Rochester Electronics |
MOSFET N-CH 500V 5.5A TO220-3 |
|
RQ5P010SNTLROHM Semiconductor |
MOSFET N-CH 100V 1A TSMT3 |
|
FDN302PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 2.4A SUPERSOT3 |
|
FQI3N25TURochester Electronics |
MOSFET N-CH 250V 2.8A I2PAK |
|
FDD7030BLRochester Electronics |
MOSFET N-CH 30V 14A/56A DPAK |
|
SI3443BDV-T1-BE3Vishay / Siliconix |
MOSFET P-CH 20V 3.6A 6TSOP |
|
FDD850N10LDRochester Electronics |
MOSFET N-CH 100V 15.3A TO252-4 |
|
IRLIZ44NPBFRochester Electronics |
MOSFET N-CH 55V 30A TO220 |
|
BB502CBS-TL-HRochester Electronics |
RF N-CHANNEL MOSFET |
|
PMPB27EP,115Nexperia |
MOSFET P-CH 30V 6.1A DFN2020MD-6 |