English
简体中文
RES ARRAY 8 RES 22K OHM 1506
MOSFET N-CH 500V 3A TO220F
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.8Ohm @ 1.5A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 17 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 610 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 39W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220F |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
HAT2165H-EL-ERenesas Electronics America |
MOSFET N-CH 30V 55A LFPAK |
|
SIA468DJ-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 37.8A PPAK SC70 |
|
MTB60N05HDLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
STB31N65M5STMicroelectronics |
MOSFET N-CH 650V 22A D2PAK |
|
PMPB19XP,115Nexperia |
MOSFET P-CH 20V 7.2A DFN2020MD-6 |
|
RDR005N25TLROHM Semiconductor |
MOSFET N-CH 250V 500MA TSMT3 |
|
FDP8D5N10CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 76A TO220-3 |
|
IXFX360N10TWickmann / Littelfuse |
MOSFET N-CH 100V 360A PLUS247-3 |
|
PMZB290UNE2YLNexperia |
MOSFET N-CH 20V 1.2A DFN1006B-3 |
|
FQA17N40Rochester Electronics |
MOSFET N-CH 400V 17.2A TO3P |
|
IPB80N04S3H4ATMA1Rochester Electronics |
MOSFET N-CH 40V 80A TO263-3 |
|
2SK2485-ARochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
SISS50DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 45V 29.7A/108A PPAK |