类型 | 描述 |
---|---|
系列: | OptiMOS™-5 |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 260A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 6V, 10V |
rds on (max) @ id, vgs: | 1.9mOhm @ 100A, 10V |
vgs(th) (最大值) @ id: | 3.8V @ 210µA |
栅极电荷 (qg) (max) @ vgs: | 166 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 11830 pF @ 50 V |
场效应管特征: | - |
功耗(最大值): | 300W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-HSOF-8-1 |
包/箱: | 8-PowerSFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTTFS4C53NTAGRochester Electronics |
MOSFET N-CH 30V 35A 8WDFN |
|
STH315N10F7-2STMicroelectronics |
MOSFET N-CH 100V 180A H2PAK-2 |
|
MMFTN20Diotec Semiconductor |
MOSFET N-CH 50V 100MA SOT23-3 |
|
RS1E150GNTBROHM Semiconductor |
MOSFET N-CH 30V 15A 8HSOP |
|
HUF76439S3STSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 75A D2PAK |
|
IRF510SPBFVishay / Siliconix |
MOSFET N-CH 100V 5.6A D2PAK |
|
SCT10N120STMicroelectronics |
SICFET N-CH 1200V 12A HIP247 |
|
SQ3427AEEV-T1_GE3Vishay / Siliconix |
MOSFET P-CH 60V 5.3A 6TSOP |
|
DMNH6021SK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 50A TO252-4L |
|
SIHB24N65ET5-GE3Vishay / Siliconix |
MOSFET N-CH 650V 24A TO263 |
|
STB10NK60ZT4STMicroelectronics |
MOSFET N-CH 600V 10A D2PAK |
|
IXFK180N25TWickmann / Littelfuse |
MOSFET N-CH 250V 180A TO264AA |
|
AOT10N65Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 10A TO220 |