English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | SiCFET (Silicon Carbide) |
| 漏源电压 (vdss): | 1200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 12A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 20V |
| rds on (max) @ id, vgs: | 690mOhm @ 6A, 20V |
| vgs(th) (最大值) @ id: | 3.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 22 nC @ 20 V |
| vgs (最大值): | +25V, -10V |
| 输入电容 (ciss) (max) @ vds: | 290 pF @ 400 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 150W (Tc) |
| 工作温度: | -55°C ~ 200°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | HiP247™ |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SQ3427AEEV-T1_GE3Vishay / Siliconix |
MOSFET P-CH 60V 5.3A 6TSOP |
|
DMNH6021SK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 50A TO252-4L |
|
SIHB24N65ET5-GE3Vishay / Siliconix |
MOSFET N-CH 650V 24A TO263 |
|
STB10NK60ZT4STMicroelectronics |
MOSFET N-CH 600V 10A D2PAK |
|
IXFK180N25TWickmann / Littelfuse |
MOSFET N-CH 250V 180A TO264AA |
|
AOT10N65Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 10A TO220 |
|
AUIRF540ZSTRLIR (Infineon Technologies) |
MOSFET N-CH 100V 36A D2PAK |
|
IXFP8N85XWickmann / Littelfuse |
MOSFET N-CH 850V 8A TO220AB |
|
DMP3008SFGQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 8.6A PWRDI3333-8 |
|
IPA60R520CPRochester Electronics |
N-CHANNEL POWER MOSFET |
|
MTD6N20E1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXTY01N100Wickmann / Littelfuse |
MOSFET N-CH 1000V 100MA TO252AA |
|
AIMW120R045M1XKSA1IR (Infineon Technologies) |
TRANS SJT N-CH 1200V 52A TO247-3 |
