MOSFET N-CH 850V 8A TO220AB
SMA-SJ/SMPM-SP G178 0.75M
类型 | 描述 |
---|---|
系列: | HiPerFET™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 850 V |
电流 - 连续漏极 (id) @ 25°c: | 8A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 850mOhm @ 4A, 10V |
vgs(th) (最大值) @ id: | 5.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 17 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 654 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 200W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220AB (IXFP) |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMP3008SFGQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 8.6A PWRDI3333-8 |
|
IPA60R520CPRochester Electronics |
N-CHANNEL POWER MOSFET |
|
MTD6N20E1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXTY01N100Wickmann / Littelfuse |
MOSFET N-CH 1000V 100MA TO252AA |
|
AIMW120R045M1XKSA1IR (Infineon Technologies) |
TRANS SJT N-CH 1200V 52A TO247-3 |
|
IMBF170R650M1XTMA1IR (Infineon Technologies) |
SICFET N-CH 1700V 7.4A TO263-7 |
|
BSP125L6433HTMA1Rochester Electronics |
MOSFET N-CH 600V 120MA SOT223-4 |
|
FQB46N15TMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RFD16N05LSM9ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 16A TO252AA |
|
SPI20N65C3XKSA1Rochester Electronics |
MOSFET N-CH 650V 20.7A TO262-3 |
|
RM3010S6Rectron USA |
MOSFET N-CHANNEL 30V 10A SOT23-6 |
|
SI7230DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 9A PPAK 1212-8 |
|
TN5335K1-GRoving Networks / Microchip Technology |
MOSFET N-CH 350V 110MA SOT23 |