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MOSFET N-CH 20V 800MA DFN0606-3
BOX ABS GRAY 6.7"L X 4.3"W
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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 800mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.2V, 4.5V |
| rds on (max) @ id, vgs: | 620mOhm @ 600mA, 4.5V |
| vgs(th) (最大值) @ id: | 0.95V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 0.31 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 21.3 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 370mW (Ta), 2.2W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DFN0606-3 (SOT8001) |
| 包/箱: | 3-XFDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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