类型 | 描述 |
---|---|
系列: | CoolMOS™ P7 |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 12A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 280mOhm @ 3.8A, 10V |
vgs(th) (最大值) @ id: | 4V @ 190µA |
栅极电荷 (qg) (max) @ vgs: | 18 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 761 pF @ 400 V |
场效应管特征: | - |
功耗(最大值): | 24W (Tc) |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO220 Full Pack |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRFR4510TRPBFIR (Infineon Technologies) |
MOSFET N CH 100V 56A DPAK |
|
FDMC8676Rochester Electronics |
MOSFET N-CH 30V 16A/18A POWER33 |
|
PMN230ENEAXNexperia |
MOSFET N-CH 60V 1.8A 6TSOP |
|
TK80S06K3L(T6L1,NQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 80A DPAK |
|
FDFS2P753ZRochester Electronics |
MOSFET P-CH 30V 3A 8SOIC |
|
BUK9529-100B/C127Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTD4810NHT4GRochester Electronics |
MOSFET N-CH 30V 9A/54A DPAK |
|
IPP80N04S403AKSA1IR (Infineon Technologies) |
MOSFET N-CH 40V 80A TO220-3-1 |
|
TP0606N3-G-P002Roving Networks / Microchip Technology |
MOSFET P-CH 60V 320MA TO92-3 |
|
RJK0349DPA-01#J0BRochester Electronics |
MOSFET N-CH 30V 45A 8WPAK |
|
IPB065N10N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 80A D2PAK |
|
SIHG73N60AE-GE3Vishay / Siliconix |
MOSFET N-CH 600V 60A TO247AC |
|
AUIRF7736M2TRRochester Electronics |
MOSFET N-CH 40V 22A/108A DIRECT |