English
简体中文
MOSFET N-CH 75V 480A SOT227B
CONN DSUB HD RCPT 15POS PNL MNT
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | GigaMOS™, HiPerFET™, TrenchT2™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 75 V |
| 电流 - 连续漏极 (id) @ 25°c: | 480A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.9mOhm @ 100A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 8mA |
| 栅极电荷 (qg) (max) @ vgs: | 545 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 41000 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 940W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Chassis Mount |
| 供应商设备包: | SOT-227B |
| 包/箱: | SOT-227-4, miniBLOC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RJK2076DPA-00#J5ARenesas Electronics America |
MOSFET N-CH 200V 20A WPAK |
|
IRFZ34PBF-BE3Vishay / Siliconix |
MOSFET N-CH 60V 30A TO220AB |
|
SIR186LDP-T1-RE3Vishay / Siliconix |
N-CHANNEL 60-V (D-S) MOSFET POWE |
|
RQ1E100XNTRROHM Semiconductor |
MOSFET N-CH 30V 10A TSMT8 |
|
NTLUS4C12NTBGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 6.8A 6UDFN |
|
SI4174DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 17A 8SO |
|
FQA27N25Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 27A TO3PN |
|
IXFA12N65X2-TRLWickmann / Littelfuse |
MOSFET N-CH 650V 12A TO263 |
|
HUFA75842S3SRochester Electronics |
MOSFET N-CH 150V 43A D2PAK |
|
YJQ40G10A-F1-1100HF |
N-CH MOSFET 100V 40A DFN3333-8L- |
|
CSD23280F3TTexas Instruments |
MOSFET P-CH 12V 1.8A 3PICOSTAR |
|
IPP062NE7N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 75V 80A TO220-3 |
|
FQPF6N60CRochester Electronics |
MOSFET N-CH 600V 5.5A TO220F |