类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Not For New Designs |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 88A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 6.1mOhm @ 16A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 19 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1133 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 78W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-PDFN (5x6) |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPB65R099C6ATMA1Rochester Electronics |
IPB65R099 - OPTLMOS N-CHANNEL |
|
RTF010P02TLROHM Semiconductor |
MOSFET P-CH 20V 1A TUMT3 |
|
IPD50N04S4L08ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 50A TO252-3 |
|
BSH205G2215Rochester Electronics |
P-CHANNEL MOSFET |
|
IPI126N10N3GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NDF08N60ZGRochester Electronics |
MOSFET N-CH 600V 8.4A TO220FP |
|
DMP6023LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 6.6A 8SO |
|
IXFT50N30Q3Wickmann / Littelfuse |
MOSFET N-CH 300V 50A TO268 |
|
RQ5E015RPTLROHM Semiconductor |
MOSFET P-CH 30V 1.5A TSMT3 |
|
NTLJS3A18PZTXGRochester Electronics |
MOSFET P-CH 20V 5A 6WDFN |
|
NTP6412ANGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 58A TO220AB |
|
IPU50R950CEAKMA1Rochester Electronics |
MOSFET N-CH 500V 4.3A TO251-3 |
|
DMT2004UFV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 24V 70A POWERDI3333 |