English
简体中文
MOSFET N-CH 30V 210A TO247AC
CIRCULAR
CONN D-TYPE RCPT 25POS R/A SLDR
CONN JACK STEREO 6.35MM PNL MNT
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 210A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 7V, 10V |
| rds on (max) @ id, vgs: | 2.8mOhm @ 76A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 209 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 8250 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.8W (Ta), 230W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247AC |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SQP100P06-9M3L_GE3Vishay / Siliconix |
MOSFET P-CH 60V 100A TO220AB |
|
CSD17571Q2Texas Instruments |
MOSFET N-CH 30V 22A 6SON |
|
IPD60R380E6ATMA2Rochester Electronics |
IPD60R380 - COOLMOS N-CHANNEL |
|
IRF1010ESTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 84A D2PAK |
|
STP35N65DM2STMicroelectronics |
MOSFET N-CH 650V 32A TO220 |
|
IPW60R099CPFKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 31A TO247-3 |
|
BUK7606-75B,118Nexperia |
MOSFET N-CH 75V 75A D2PAK |
|
FQB25N33TMRochester Electronics |
MOSFET N-CH 330V 25A D2PAK |
|
FDBL86063-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 240A 8HPSOF |
|
IXTT16N20D2Wickmann / Littelfuse |
MOSFET N-CH 200V 16A TO268 |
|
IXFT36N50PWickmann / Littelfuse |
MOSFET N-CH 500V 36A TO268 |
|
PSMN019-100YLXNexperia |
MOSFET N-CH 100V 56A LFPAK56 |
|
BUK964R1-40E,118Nexperia |
MOSFET N-CH 40V 75A D2PAK |