类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
YJL3134KW-F2-0000HF |
N-CH MOSFET 20V 0.75A SOT-323 |
|
IRF710BRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDP65N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 65A TO220-3 |
|
IRFPC40PBFVishay / Siliconix |
MOSFET N-CH 600V 6.8A TO247-3 |
|
BSC0906NSRochester Electronics |
BSC0906 - 12V-300V N-CHANNEL POW |
|
STW63N65DM2STMicroelectronics |
MOSFET N-CH 650V 65A TO247 |
|
ISL9N312AD3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SJ650Rochester Electronics |
MOSFET P-CH 60V 12A TO220ML |
|
SIR616DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 200V 20.2A PPAK SO-8 |
|
IPD60R750E6BTMA1Rochester Electronics |
MOSFET N-CH 600V 5.7A TO252 |
|
IXTN170P10PWickmann / Littelfuse |
MOSFET P-CH 100V 170A SOT227B |
|
NTD60N03Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
BSP88L6327HTSA1Rochester Electronics |
MOSFET N-CH 240V 350MA SOT223-4 |