







MOSFET N-CH 60V 9.4A 6UDFN
IC REG LINEAR 5V 100MA TO92-3
HOBBS-SF SWITCH
SENSOR 200PSI 3/8-24 UNF 4-20MA
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9.4A (Ta) |
| 驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
| rds on (max) @ id, vgs: | 18mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 15.3 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 925 pF @ 30 V |
| 场效应管特征: | - |
| 功耗(最大值): | 1.06W (Ta) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | U-DFN2020-6 |
| 包/箱: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
SI4465ADY-T1-E3Vishay / Siliconix |
MOSFET P-CH 8V 8SOIC |
|
|
SQJ459EP-T1_GE3Vishay / Siliconix |
MOSFET P-CH 60V 52A PPAK SO-8 |
|
|
FDD9410-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 50A DPAK |
|
|
NTMSD2P102R2Rochester Electronics |
MOSFET P-CH 20V 2.3A 8-SOIC |
|
|
NTD20P06LT4GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
|
AUIRF1010ZSRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
|
IPB015N08N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 180A TO263-7 |
|
|
SIHH180N60E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 19A PPAK 8 X 8 |
|
|
AON7290Alpha and Omega Semiconductor, Inc. |
MOSFET N CH 100V 15A 8DFN |
|
|
STW25N60M2-EPSTMicroelectronics |
MOSFET N-CHANNEL 600V 18A TO247 |
|
|
FDD4243Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 6.7A/14A DPAK |
|
|
TSM036N03PQ56 RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 30V 124A 8PDFN |
|
|
IXTA1N200P3HVWickmann / Littelfuse |
MOSFET N-CH 2000V 1A TO263 |