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| 类型 | 描述 |
|---|---|
| 系列: | Z-FET™ |
| 包裹: | Tube |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | SiCFET (Silicon Carbide) |
| 漏源电压 (vdss): | 1200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 10A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 20V |
| rds on (max) @ id, vgs: | 370mOhm @ 6A, 20V |
| vgs(th) (最大值) @ id: | 2.8V @ 1.25mA (Typ) |
| 栅极电荷 (qg) (max) @ vgs: | 20.4 nC @ 20 V |
| vgs (最大值): | +25V, -10V |
| 输入电容 (ciss) (max) @ vds: | 259 pF @ 1000 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 62.5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247-3 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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