FIXED IND 200UH 3A 80 MOHM TH
MOSFET N-CH 200V 88A TO263-3
类型 | 描述 |
---|---|
系列: | OptiMOS™ 3 |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 200 V |
电流 - 连续漏极 (id) @ 25°c: | 88A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 11mOhm @ 88A, 10V |
vgs(th) (最大值) @ id: | 4.2V @ 260µA |
栅极电荷 (qg) (max) @ vgs: | 76 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 650 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 250W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-TO263-3 |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STW21NM60NDSTMicroelectronics |
MOSFET N-CH 600V 17A TO247-3 |
|
IRF7451TRPBFIR (Infineon Technologies) |
MOSFET N-CH 150V 3.6A 8SO |
|
SQJA04EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 75A PPAK SO-8 |
|
BUK7Y7R8-80EXNexperia |
MOSFET N-CH 80V 100A LFPAK56 |
|
STF9N65M2STMicroelectronics |
MOSFET N-CH 650V 5A TO220FP |
|
FQPF13N50CFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 13A TO220F |
|
BUK653R5-55C,127Rochester Electronics |
PFET, 120A I(D), 55V, 0.0055OHM, |
|
DMP4065S-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 2.4A SOT23 |
|
FCPF1300N80ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 4A TO220F |
|
PMPB15XP,115Nexperia |
MOSFET P-CH 12V 8.2A DFN2020MD-6 |
|
NTB22N06LT4Rochester Electronics |
MOSFET N-CH 60V 22A D2PAK |
|
FQI4N80TURochester Electronics |
MOSFET N-CH 800V 3.9A I2PAK |
|
UF3C065040K4SUnitedSiC |
MOSFET N-CH 650V 54A TO247-4 |