English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 90A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 22mOhm @ 45A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 4mA |
| 栅极电荷 (qg) (max) @ vgs: | 190 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 6800 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 500W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PLUS247™-3 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIHFZ48RS-GE3Vishay / Siliconix |
MOSFET N-CH 60V 50A D2PAK |
|
NTGS5120PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 1.8A 6TSOP |
|
IPP060N06NRochester Electronics |
IPP060N06 - 12V-300V N-CHANNEL P |
|
UPA2800T1L-E1-AYRochester Electronics |
MOSFET N-CH 30V 17A 8DFN |
|
IPB65R310CFDATMA2IR (Infineon Technologies) |
MOSFET N-CH 650V 11.4A TO263-3 |
|
STP140N6F7STMicroelectronics |
MOSFET N-CH 60V 80A TO220 |
|
FQP27P06Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 27A TO220-3 |
|
SPW12N50C3XKRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXFB100N50PWickmann / Littelfuse |
MOSFET N-CH 500V 100A PLUS264 |
|
BSZ040N06LS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 40A TSDSON |
|
IPN80R3K3P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 1.9A SOT223 |
|
DMN2400UFB-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 750MA 3DFN |
|
FDD6612ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 9.5A/30A DPAK |
