类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
APT5010JLLU2Roving Networks / Microchip Technology |
MOSFET N-CH 500V 41A SOT227 |
|
BUZ41ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
SQJ460AEP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 32A PPAK SO-8 |
|
DMP21D6UFD-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 600MA 3DFN |
|
IRF624PBF-BE3Vishay / Siliconix |
MOSFET N-CH 250V 4.4A TO220AB |
|
BUK7606-55A,118Rochester Electronics |
MOSFET N-CH 55V 75A D2PAK |
|
SI1480DH-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 2.6A SC70-6 |
|
BSS169H6906XTSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 170MA SOT23-3 |
|
AUIRF2805STRLRochester Electronics |
MOSFET N-CH 55V 135A D2PAK |
|
CPH3457-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 3A 3CPH |
|
TK62J60W,S1VQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 61.8A TO3P |
|
IXFA16N50PWickmann / Littelfuse |
MOSFET N-CH 500V 16A TO263 |
|
FDD3706Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 14.7A/50A DPAK |