English
简体中文
ERL-20 500 1% T-1 RLR20C5000FR R
MOSFET N-CH 600V 61.8A TO3P
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | DTMOSIV |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 61.8A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 38mOhm @ 30.9A, 10V |
| vgs(th) (最大值) @ id: | 3.7V @ 3.1mA |
| 栅极电荷 (qg) (max) @ vgs: | 180 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 6500 pF @ 300 V |
| 场效应管特征: | Super Junction |
| 功耗（最大值）: | 400W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-3P(N) |
| 包/箱: | TO-3P-3, SC-65-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXFA16N50PWickmann / Littelfuse |
MOSFET N-CH 500V 16A TO263 |
|
FDD3706Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 14.7A/50A DPAK |
|
SI2369BDS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 5.6A/7.5A SOT23 |
|
SI3134K-TPMicro Commercial Components (MCC) |
MOSFET N-CH 20V 750MA SOT723 |
|
BSC117N08NS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 49A TDSON |
|
IRL40S212IR (Infineon Technologies) |
MOSFET N-CH 40V 195A D2PAK |
|
IPD70P04P4L08ATMA1IR (Infineon Technologies) |
MOSFET P-CH 40V 70A TO252-3 |
|
SIHFL9014TR-GE3Vishay / Siliconix |
MOSFET P-CH 60V 1.8A SOT223 |
|
LND150N3-G-P002Roving Networks / Microchip Technology |
MOSFET N-CH 500V 30MA TO92-3 |
|
IRFW710BTMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPB081N06L3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 50A D2PAK |
|
FDMS86581-F085Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
IRFB4510PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 62A TO220AB |