English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | NexFET™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 124A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 5.3mOhm @ 19A, 10V |
| vgs(th) (最大值) @ id: | 2.4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 61 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4280 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 96W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-VSONP (5x6) |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQU5N50CTU-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 4A IPAK |
|
FDMC7672Rochester Electronics |
MOSFET N-CH 30V 16.9A/20A 8MLP |
|
CSD19531KCSTexas Instruments |
MOSFET N-CH 100V 100A TO220-3 |
|
IRF840LPBFVishay / Siliconix |
MOSFET N-CH 500V 8A TO263AB |
|
IPP50R350CPXKSA1Rochester Electronics |
COOLMOS 10A, 500V N-CHANNEL |
|
TSM024NA04LCR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 40V 170A 8PDFN |
|
STP80NF55-06STMicroelectronics |
MOSFET N-CH 55V 80A TO220AB |
|
FCD7N60TM-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 7A DPAK |
|
IRF1018ESTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 79A D2PAK |
|
TPN11006PL,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 26A 8TSON |
|
IRL1404PBFRochester Electronics |
HEXFET POWER MOSFET |
|
2SK3229-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPB80N04S2H4ATMA2Rochester Electronics |
IPB80N04 - 20V-40V N-CHANNEL AUT |
