English
简体中文
MOSFET N-CH 30V 40A PPAK SO-8
DIODE SCHOTTKY 80V 3A DO214AA
CONN MICRO-D PLUG 25POS R/A SLDR
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 40A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 3.5mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 2.4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 65 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2730 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 5W (Ta), 54W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® SO-8 |
| 包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RF4E110BNTRROHM Semiconductor |
MOSFET N-CH 30V 11A HUML2020L8 |
|
FQD1N60TMRochester Electronics |
MOSFET N-CH 600V 1A DPAK |
|
STP46NF30STMicroelectronics |
MOSFET N CH 300V 42A TO-220 |
|
TPH3208PSTransphorm |
GANFET N-CH 650V 20A TO220AB |
|
PMCM4401UPE084Rochester Electronics |
P-CHANNEL MOSFET |
|
SIJ438DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 80A PPAK SO-8 |
|
EPC2034EPC |
GANFET N-CH 200V 48A DIE |
|
BSP135H6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 120MA SOT223-4 |
|
IRF430Rochester Electronics |
500V, N-CHANNEL REPETITIVE AVALA |
|
BUK9875-100A/CU115Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
PMBF170,235Nexperia |
MOSFET N-CH 60V 300MA TO236AB |
|
BUK6212-40C,118Nexperia |
MOSFET N-CH 40V 50A DPAK |
|
AUIRF7732S2TRRochester Electronics |
MOSFET N-CH 40V 14A DIRECTFET SC |