English
简体中文
MOSFET N-CH 600V 7A TO251A
PATCHCORD BCAT6+ CMR LTGN 3FT
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 7A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.3Ohm @ 3.5A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 24 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1170 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 178W (Tc) |
| 工作温度: | -50°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-251A |
| 包/箱: | TO-251-3 Stub Leads, IPak |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTTFS4840NTAGRochester Electronics |
MOSFET N-CH 30V 4.6A/26A 8WDFN |
|
SFW9Z34TMRochester Electronics |
MOSFET P-CH 60V 18A D2PAK |
|
APT47M60JRoving Networks / Microchip Technology |
MOSFET N-CH 600V 49A ISOTOP |
|
SIHB12N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 12A D2PAK |
|
NVMFS5C468NT1GRochester Electronics |
MOSFET N-CH 40V 12A/35A 5DFN |
|
SI3456DDV-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 6.3A 6TSOP |
|
AOTF42S60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 39A TO220-3F |
|
BSC025N03MSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 100A TDSON-8 |
|
STL3N65M2STMicroelectronics |
MOSFET N-CH 650V 2.3A POWERFLAT |
|
FDU8882Rochester Electronics |
MOSFET N-CH 30V 12.6A/55A IPAK |
|
IPI70N12S311AKSA1Rochester Electronics |
MOSFET N-CH 120V 70A TO262-3 |
|
SIHFR9310TR-GE3Vishay / Siliconix |
MOSFET P-CH 400V 1.8A DPAK |
|
TJ15S06M3L(T6L1,NQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 60V 15A DPAK |