类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Box (TB) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 240 V |
电流 - 连续漏极 (id) @ 25°c: | 260mA (Ta) |
驱动电压(最大 rds on,最小 rds on): | 2.5V, 10V |
rds on (max) @ id, vgs: | 5.5Ohm @ 500mA, 10V |
vgs(th) (最大值) @ id: | 1.8V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±40V |
输入电容 (ciss) (max) @ vds: | 200 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 750mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | E-Line (TO-92 compatible) |
包/箱: | E-Line-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI8800EDB-T2-E1Vishay / Siliconix |
MOSFET N-CH 20V 4MICROFOOT |
|
PH2520U,115Rochester Electronics |
MOSFET N-CH 20V 100A LFPAK56 |
|
VN3205N3-G-P002Roving Networks / Microchip Technology |
MOSFET N-CH 50V 1.2A TO92-3 |
|
NTTFS4C13NTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 7.2A 8WDFN |
|
IPB60R299CPRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF624SPBFVishay / Siliconix |
MOSFET N-CH 250V 4.4A D2PAK |
|
NDD03N60Z-1GRochester Electronics |
MOSFET N-CH 600V 2.6A IPAK |
|
NTP5D0N15MCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 15A/139A TO220 |
|
5HP01M-TL-E-FSRochester Electronics |
MOSFET P-CH 50V 0.07A MCP3 |
|
IXTT6N120Wickmann / Littelfuse |
MOSFET N-CH 1200V 6A TO268 |
|
NTJS4405NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 1A SC88/SC70-6 |
|
IMZ120R045M1XKSA1IR (Infineon Technologies) |
SICFET N-CH 1200V 52A TO247-4 |
|
CSD18534Q5ATTexas Instruments |
MOSFET N-CHANNEL 60V 50A 8VSON |