English
简体中文
MEMS OSC XO 24.545454MHZ H/LV-CM
MOSFET N-CH 20V 2.5A TUMT3
RF ANT 2.4GHZ PANEL RP-SMA ML 8"
RF MOSFET LDMOS SOT975C
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.5A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.5V, 4.5V |
| rds on (max) @ id, vgs: | 54mOhm @ 2.5A, 4.5V |
| vgs(th) (最大值) @ id: | 1.3V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 5 nC @ 4.5 V |
| vgs (最大值): | ±10V |
| 输入电容 (ciss) (max) @ vds: | 370 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 800mW (Ta) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TUMT3 |
| 包/箱: | 3-SMD, Flat Lead |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRLR014TRLPBFVishay / Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
|
IPW60R075CPFKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 39A TO247-3 |
|
PMT200EPEXNexperia |
MOSFET P-CH 70V 2.4A SOT223 |
|
IRFL4310TRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 1.6A SOT223 |
|
STP5NK50ZFPSTMicroelectronics |
MOSFET N-CH 500V 4.4A TO220FP |
|
IPB65R600C6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
YJL2304A-F2-0100HF |
N-CH MOSFET 30V 3.6A SOT-23-3L |
|
AUIRFR48ZTRLIR (Infineon Technologies) |
MOSFET N-CH 55V 42A DPAK |
|
IRFS720BRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQA10N80C-F109Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 10A TO3P |
|
IRFP254BRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SCH1335-TL-HRochester Electronics |
MOSFET P-CH 12V 2.5A 6SCH |
|
R5009FNJTLROHM Semiconductor |
MOSFET N-CH 500V 9A LPTS |