类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 2.3A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 2.5V, 5V |
rds on (max) @ id, vgs: | 88mOhm @ 1.2A, 5V |
vgs(th) (最大值) @ id: | 1.4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 12 nC @ 5 V |
vgs (最大值): | 12V |
输入电容 (ciss) (max) @ vds: | 800 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 350mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23F |
包/箱: | SOT-23-3 Flat Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SUM10250E-GE3Vishay / Siliconix |
MOSFET N-CH 250V 63.5A D2PAK |
|
STB70NF3LLT4STMicroelectronics |
MOSFET N-CH 30V 70A D2PAK |
|
IPW65R110CFDFKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 31.2A TO247-3 |
|
SCT3060ARC14ROHM Semiconductor |
SICFET N-CH 650V 39A TO247-4L |
|
IRFBC20PBFVishay / Siliconix |
MOSFET N-CH 600V 2.2A TO220AB |
|
BUK7E1R9-40E,127Nexperia |
MOSFET N-CH 40V 120A I2PAK |
|
IPL60R2K1C6SATMA1Rochester Electronics |
600V COOLMOS N-CHANNEL POWER MOS |
|
YJQ40P03A-F1-1100HF |
P-CH MOSFET 30V 40A DFN3333-8L |
|
DMT6016LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 10.6A PWRDI5060 |
|
FQP10N20CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 9.5A TO220-3 |
|
STW18NM60NDSTMicroelectronics |
MOSFET N-CH 600V 13A TO247 |
|
BSC884N03MS GRochester Electronics |
MOSFET N-CH 34V 17A/85A TDSON |
|
BSZ0503NSIATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 20A/40A TSDSON |