English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5.6A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4V, 5V |
| rds on (max) @ id, vgs: | 540mOhm @ 3.4A, 5V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 6.1 nC @ 5 V |
| vgs (最大值): | ±10V |
| 输入电容 (ciss) (max) @ vds: | 250 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.7W (Ta), 43W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQD2N50TFRochester Electronics |
MOSFET N-CH 500V 1.6A DPAK |
|
IRF7404TRPBFIR (Infineon Technologies) |
MOSFET P-CH 20V 6.7A 8SO |
|
RT1A050ZPTRROHM Semiconductor |
MOSFET P-CH 12V 5A 8TSST |
|
SSM3K56MFV,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 800MA VESM |
|
MCH3478-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 2A 3MCPH |
|
IRFS3806TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 43A D2PAK |
|
FDS8638Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 18A 8SOIC |
|
IPP034N03LGXKSA1IR (Infineon Technologies) |
MOSFET N-CH 30V 80A TO220-3 |
|
STP6NK90ZSTMicroelectronics |
MOSFET N-CH 900V 5.8A TO220AB |
|
NTMFS4C35NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 12.4A 5DFN |
|
R6018ANJTLROHM Semiconductor |
MOSFET N-CH 600V 18A LPTS |
|
IXTU01N100DWickmann / Littelfuse |
MOSFET N-CH 1000V 100MA TO251 |
|
STF6N65K3STMicroelectronics |
MOSFET N-CH 650V 5.4A TO220FP |
