类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTP190N65S3HFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 20A TO220-3 |
|
DMN3025LFV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 25A POWERDI3333 |
|
IPD50N12S3L15ATMA1Rochester Electronics |
IPD50N12 - 120V-300V N-CHANNEL A |
|
IRFR5410TRRPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 13A DPAK |
|
IRFB11N50APBF-BE3Vishay / Siliconix |
MOSFET N-CH 500V 11A TO220AB |
|
RSJ151P10TLROHM Semiconductor |
MOSFET P-CH 100V 15A LPTS |
|
CXDM3069N TR PBFREECentral Semiconductor |
MOSFET N-CH 30V 6.9A SOT-89 |
|
IXTK82N25PWickmann / Littelfuse |
MOSFET N-CH 250V 82A TO264 |
|
STW12NK80ZSTMicroelectronics |
MOSFET N-CH 800V 10.5A TO247-3 |
|
AUIRFU1010ZRochester Electronics |
MOSFET N-CH 55V 42A TO251-3 |
|
IPP80P03P4L04AKSA1IR (Infineon Technologies) |
MOSFET P-CH 30V 80A TO220-3 |
|
RU1J002YNTCLROHM Semiconductor |
MOSFET N-CH 50V 200MA UMT3F |
|
IPB60R120C7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 19A TO263-3 |