English
简体中文
MOSFET N-CH 20V 200MA CST3
CONN BARRIER STRIP 8CIRC 0.438"
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | U-MOSIII |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 200mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.5V, 4.5V |
| rds on (max) @ id, vgs: | 2.2Ohm @ 100mA, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±10V |
| 输入电容 (ciss) (max) @ vds: | 12 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 100mW (Ta) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | CST3 |
| 包/箱: | SC-101, SOT-883 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SPA04N80C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 4A TO220-FP |
|
APT20M18LVRGRoving Networks / Microchip Technology |
MOSFET N-CH 200V 100A TO264 |
|
SIS476DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 40A PPAK1212-8 |
|
RCJ120N25TLROHM Semiconductor |
MOSFET N-CH 250V 12A LPT |
|
IRF9520PBFVishay / Siliconix |
MOSFET P-CH 100V 6.8A TO220AB |
|
PSMN3R5-80PSRochester Electronics |
NOW NEXPERIA PSMN3R5-80PS - POWE |
|
IRF135B203Rochester Electronics |
IRF135B - 12V-300V N-CHANNEL POW |
|
IRFR310PBFVishay / Siliconix |
MOSFET N-CH 400V 1.7A DPAK |
|
NVB60N06T4GRochester Electronics |
MOSFET N-CH 60V 60A D2PAK |
|
IPA60R600C6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 7.3A TO220-FP |
|
DMG2305UXQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 4.2A SOT23 |
|
IRFS3006TRL7PPIR (Infineon Technologies) |
MOSFET N-CH 60V 240A D2PAK |
|
SSM6J801R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 6A 6TSOP |