English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 58A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 8.5mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1844 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 46W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-DFN (5x6) |
| 包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NX7002BKMBYLRochester Electronics |
NX7002B - 60V, N-CHANNEL TRENCH |
|
CSD18510KCSTexas Instruments |
MOSFET N-CH 40V 200A TO220-3 |
|
PMV120ENEARNexperia |
MOSFET N-CH 60V 2.1A TO236AB |
|
STWA48N60M6STMicroelectronics |
MOSFET N-CH 600V 39A TO247 |
|
RQ6E080AJTCRROHM Semiconductor |
MOSFET N-CH 30V 8A TSMT6 |
|
NTB30N20T4GRochester Electronics |
MOSFET N-CH 200V 30A D2PAK |
|
PMV48XP/MI215Rochester Electronics |
P-CHANNEL MOSFET |
|
SIHG22N60AE-GE3Vishay / Siliconix |
MOSFET N-CH 600V 20A TO247AC |
|
IPD60R360PFD7SAUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 10A TO252-3 |
|
APT13F120SRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 14A D3PAK |
|
BSS123TAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 170MA SOT23-3 |
|
NTMFD4951NFT3GRochester Electronics |
MOSFET N-CH 30V 10.8A 8DFN DL |
|
H7N0308CF-ERochester Electronics |
N-CHANNEL POWER MOSFET |
