类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 80 V |
电流 - 连续漏极 (id) @ 25°c: | 20A (Ta), 123A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 6V, 10V |
rds on (max) @ id, vgs: | 3.7mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 4V @ 190µA |
栅极电荷 (qg) (max) @ vgs: | 46 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 3100 pF @ 40 V |
场效应管特征: | - |
功耗(最大值): | 3.8W (Ta), 136W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 5-DFN (5x6) (8-SOFL) |
包/箱: | 8-PowerTDFN, 5 Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMP2540UCB9-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 25V 4A U-WLB1515-9 |
|
NTMFS4935NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 13A/93A 5DFN |
|
NVMYS1D3N04CTWGSanyo Semiconductor/ON Semiconductor |
TRENCH 6 40V SL NFET |
|
TSM120N06LCR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 60V 54A 8PDFN |
|
SIHH26N60EF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 24A PPAK 8 X 8 |
|
FDI038AN06A0_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RSE002P03TLROHM Semiconductor |
MOSFET P-CH 30V 200MA EMT3 |
|
CSD18542KTTTTexas Instruments |
MOSFET N-CH 60V 200A/170A DDPAK |
|
BSP135L6906HTSA1Rochester Electronics |
MOSFET N-CH 600V 120MA SOT223-4 |
|
IRFBC40ASTRRPBFVishay / Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
|
DMTH8012LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 80V 50A TO252 |
|
FQD12N20LTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 9A DPAK |
|
DMN6068SE-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 4.1A SOT223 |