English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6.2A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.2Ohm @ 3.7A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 42 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1036 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 125W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMTH8012LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 80V 50A TO252 |
|
FQD12N20LTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 9A DPAK |
|
DMN6068SE-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 4.1A SOT223 |
|
2SJ542-ERochester Electronics |
MOSFET N-CH 60V 18A TO220AB |
|
APT14M120BRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 14A TO247 |
|
RM5N800LDRectron USA |
MOSFET N-CHANNEL 800V 5A TO252-2 |
|
AON7544Alpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 30V 30A 8DFN |
|
STD9NM50NSTMicroelectronics |
MOSFET N-CH 500V 5A DPAK |
|
HUFA75344P3Rochester Electronics |
MOSFET N-CH 55V 75A TO220-3 |
|
APT75M50B2Roving Networks / Microchip Technology |
MOSFET N-CH 500V 75A T-MAX |
|
2SJ545-ERochester Electronics |
P-CHANNEL POWER MOSFET |
|
IPP80R900P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 6A TO220-3 |
|
STD7NM80-1STMicroelectronics |
MOSFET N-CH 800V 6.5A IPAK |
