类型 | 描述 |
---|---|
系列: | AlphaMOS |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 30A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 5mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 2.2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 22.5 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 951 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 23W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-DFN-EP (3x3) |
包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STD9NM50NSTMicroelectronics |
MOSFET N-CH 500V 5A DPAK |
|
HUFA75344P3Rochester Electronics |
MOSFET N-CH 55V 75A TO220-3 |
|
APT75M50B2Roving Networks / Microchip Technology |
MOSFET N-CH 500V 75A T-MAX |
|
2SJ545-ERochester Electronics |
P-CHANNEL POWER MOSFET |
|
IPP80R900P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 6A TO220-3 |
|
STD7NM80-1STMicroelectronics |
MOSFET N-CH 800V 6.5A IPAK |
|
FDPF085N10ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 40A TO220F |
|
MVMBF0201NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 300MA SOT-23-3 |
|
AOT4S60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 4A TO220 |
|
DMT3006LFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V PWRDI3333 |
|
NVTFS4C25NTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 10.1A/22.1A 8DFN |
|
SIS126DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 12A/45.1A PPAK |
|
IPP45P03P4L11AKSA1Rochester Electronics |
MOSFET P-CH 30V 45A TO220-3 |