English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.7A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 50mOhm @ 7.8A, 10V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 12.6 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 600 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.1W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23-6 |
| 包/箱: | SOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUZ111SRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF7413TRPBFRochester Electronics |
MOSFET N-CH 30V 13A 8SO |
|
IPB022N04LGATMA1Rochester Electronics |
MOSFET N-CH 40V 90A D2PAK |
|
BSC036NE7NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 75V 100A TDSON |
|
HUF75542P3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 75A TO220-3 |
|
ISL9N322AP3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NVMFS5C460NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 19A/71A 5DFN |
|
FDS6680SRochester Electronics |
MOSFET N-CH 30V 11.5A 8SOIC |
|
FQA13N80-F109Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
IRF7324D1TRPBFIR (Infineon Technologies) |
MOSFET P-CH 20V 2.2A 8SO |
|
ZXM62P03E6TAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 1.5A SOT26 |
|
IXFP26N50P3Wickmann / Littelfuse |
MOSFET N-CH 500V 26A TO220AB |
|
SQJQ404E-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 200A PPAK 8 X 8 |
