类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 5.1A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 74mOhm @ 4.1A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 15 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 450 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 2W (Ta), 3W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 6-TSOP |
包/箱: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDP18N20FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 18A TO220-3 |
|
FDU6644Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
CMS70N04H8-HFComchip Technology |
MOSFET N-CH 40V 70A DFN5X6 |
|
SFT1443-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 9A DPAK/TP-FA |
|
SUM65N20-30-E3Vishay / Siliconix |
MOSFET N-CH 200V 65A TO263 |
|
SIJ128LDP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 10.2A/25.5A PPAK |
|
RRH090P03TB1ROHM Semiconductor |
MOSFET P-CH 30V 9A 8SOP |
|
FQPF12P20XDTURochester Electronics |
MOSFET P-CH 200V 7.3A TO-220F |
|
IPAW60R280P7SE8228XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 12A TO220 |
|
PMV450ENEARNexperia |
MOSFET N-CH 60V 800MA TO236AB |
|
FQB70N10TMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SPW11N60CFDFKSA1Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
SFR9210TMRochester Electronics |
P-CHANNEL POWER MOSFET |