English
简体中文
MEMS OSC XO 40.0000MHZ H/LV-CMOS
IRFH7921 - HEXFET POWER MOSFET
SICFET N-CH 700V 37A D3PAK
MSM20-M2M2M2M2TZ9HH9E99.9.99
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 15A (Ta), 34A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 8.5mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 2.35V @ 25µA |
| 栅极电荷 (qg) (max) @ vgs: | 14 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1.21 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.1W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PQFN (5x6) Single Die |
| 包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK752R3-40E,127Rochester Electronics |
MOSFET N-CH 40V 120A TO220AB |
|
BSC0802LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 20A/100A TDSON |
|
IRFR3910TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 16A DPAK |
|
BUK964R2-55B,118Nexperia |
MOSFET N-CH 55V 75A D2PAK |
|
DMP3018SFV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 11A PWRDI3333 |
|
APT10086BVRGRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 13A TO247 |
|
VN0109N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 90V 350MA TO92-3 |
|
APT6013LLLGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 43A TO264 |
|
NVH4L080N120SC1Sanyo Semiconductor/ON Semiconductor |
TRANS SJT N-CH 1200V 29A TO247-4 |
|
BSZ0910LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 18A/40A TSDSON |
|
SIHP22N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO220AB |
|
FQD2N60CTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 1.9A DPAK |
|
PSMN1R6-30MLHXNexperia |
MOSFET N-CH 30V 160A LFPAK33 |