English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | NexFET™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.2A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.5V, 4.5V |
| rds on (max) @ id, vgs: | 33mOhm @ 1.5A, 4.5V |
| vgs(th) (最大值) @ id: | 1.1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 4.1 nC @ 4.5 V |
| vgs (最大值): | -6V |
| 输入电容 (ciss) (max) @ vds: | 570 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 6-DSBGA (1x1.5) |
| 包/箱: | 6-UFBGA, DSBGA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDD6690SRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPW65R190E6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FCPF380N65FL1Rochester Electronics |
SF2 650V 380MOHM F TO220F |
|
RTL030P02TRROHM Semiconductor |
MOSFET P-CH 20V 3A TUMT6 |
|
NTS2101PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 8V 1.4A SC70-3 |
|
SIHFL110TR-GE3Vishay / Siliconix |
MOSFET N-CH 100V 1.5A SOT223 |
|
SFT1440-TL-ERochester Electronics |
MOSFET N-CH 600V 1.5A TP-FA |
|
HUF75307T3STRochester Electronics |
MOSFET N-CH 55V 2.6A SOT223-4 |
|
2SK2011Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF9610PBFVishay / Siliconix |
MOSFET P-CH 200V 1.8A TO220AB |
|
SI7456DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 100V 5.7A PPAK SO-8 |
|
IXFN32N100Q3Wickmann / Littelfuse |
MOSFET N-CH 1000V 28A SOT227B |
|
IRFP3710PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 57A TO247AC |
