English
简体中文
PTC RESET FUSE 8V 1.1A 1210
GANFET N-CH 40V 2.7A DIE
RS20-2400M2M2SDAPHHXX.X.
EXTENDED WARRANTY
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | eGaN® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | GaNFET (Gallium Nitride) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.7A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 5V |
| rds on (max) @ id, vgs: | 110mOhm @ 500mA, 5V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 0.45 nC @ 5 V |
| vgs (最大值): | +6V, -4V |
| 输入电容 (ciss) (max) @ vds: | 52 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | Die |
| 包/箱: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPS031N03LGAKMA1Rochester Electronics |
MOSFET N-CH 30V 90A TO251-31 |
|
AONR36326CAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 12A/12A 8DFN |
|
IPA60R280E6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 13.8A TO220-FP |
|
SQM120N10-3M8_GE3Vishay / Siliconix |
MOSFET N-CH 100V 120A TO263 |
|
NDF05N50ZGRochester Electronics |
MOSFET N-CH 500V 5.5A TO220FP |
|
DMN2400UFB4-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 750MA 3DFN |
|
NTR4501NT3GRochester Electronics |
MOSFET N-CH 20V 3.2A SOT23-3 |
|
ES6U3T2CRROHM Semiconductor |
MOSFET N-CH 30V 1.4A WEMT6 |
|
AUIRF5210SRochester Electronics |
MOSFET P-CH 100V 38A D2PAK |
|
NTD4858NA-35GRochester Electronics |
MOSFET N-CH 25V 11.2A/73A IPAK |
|
AOT380A60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO220 |
|
5HN02NRochester Electronics |
N-CHANNEL SILICON MOSFET |
|
BBS3002-TL-1ESanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 100A D2PAK |