类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 3.2A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.8V, 4.5V |
rds on (max) @ id, vgs: | 80mOhm @ 3.6A, 4.5V |
vgs(th) (最大值) @ id: | 1.2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 6 nC @ 4.5 V |
vgs (最大值): | ±12V |
输入电容 (ciss) (max) @ vds: | 200 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 1.25W (Tj) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23-3 (TO-236) |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
ES6U3T2CRROHM Semiconductor |
MOSFET N-CH 30V 1.4A WEMT6 |
|
AUIRF5210SRochester Electronics |
MOSFET P-CH 100V 38A D2PAK |
|
NTD4858NA-35GRochester Electronics |
MOSFET N-CH 25V 11.2A/73A IPAK |
|
AOT380A60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO220 |
|
5HN02NRochester Electronics |
N-CHANNEL SILICON MOSFET |
|
BBS3002-TL-1ESanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 100A D2PAK |
|
BUZ100S-E3045ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXTA05N100HV-TRLWickmann / Littelfuse |
MOSFET N-CH 1000V 750MA TO263HV |
|
IRF530STRLPBFVishay / Siliconix |
MOSFET N-CH 100V 14A D2PAK |
|
FQP45N15V2Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 45A TO220-3 |
|
STP22NM60NSTMicroelectronics |
MOSFET N-CH 600V 16A TO220AB |
|
AON6590Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 67A/100A 8DFN |
|
FQD3N50CTFRochester Electronics |
MOSFET N-CH 500V 2.5A DPAK |