English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PowerTrench® |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.5V, 4.5V |
| rds on (max) @ id, vgs: | 23mOhm @ 6A, 4.5V |
| vgs(th) (最大值) @ id: | 1.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 10 nC @ 4.5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 670 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.7W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 9-BGA (1.5x1.6) |
| 包/箱: | 9-VFBGA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STB24N65M2STMicroelectronics |
MOSFET N-CH 650V 16A D2PAK |
|
SIHG22N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 19A TO247AC |
|
PMV65XP1215Rochester Electronics |
P-CHANNEL MOSFET |
|
IPD65R380E6Rochester Electronics |
MOSFET N-CH 650V 10.6A TO252-3 |
|
FDS5670Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 10A 8SOIC |
|
CSD19532Q5BTexas Instruments |
MOSFET N-CH 100V 100A 8VSON |
|
STH410N4F7-6AGSTMicroelectronics |
MOSFET N-CH 40V 200A H2PAK-6 |
|
IRFZ44ESTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 48A D2PAK |
|
APT50M75B2FLLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 57A T-MAX |
|
IRFB3407ZPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 120A TO220AB |
|
IXTT16N50D2Wickmann / Littelfuse |
MOSFET N-CH 500V 16A TO268 |
|
2SK2858-T1-ARochester Electronics |
MOSFET N-CH 30V 100MA SC70-3 SSP |
|
FDC642P-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 4A SUPERSOT6 |
