类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, PowerTrench® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 4A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 2.5V, 4.5V |
rds on (max) @ id, vgs: | 65mOhm @ 4A, 4.5V |
vgs(th) (最大值) @ id: | 1.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 16 nC @ 4.5 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 640 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 1.2W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SuperSOT™-6 |
包/箱: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDS8449Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 7.6A 8SOIC |
|
R6520KNZ4C13ROHM Semiconductor |
MOSFET N-CH 650V 20A TO247 |
|
SIR166DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |
|
APT20M16LFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 200V 100A TO264 |
|
RQ3E160ADTBROHM Semiconductor |
MOSFET N-CH 30V 16A 8HSMT |
|
SPS03N60C3AKMA1Rochester Electronics |
MOSFET N-CH 650V 3.2A TO251-3-11 |
|
IPB024N10N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 180A TO263-7 |
|
STI10NM60NSTMicroelectronics |
MOSFET N-CH 600V 10A I2PAK |
|
IPB080N03LGATMA1Rochester Electronics |
PFET, 48A I(D), 30V, 0.0119OHM, |
|
IRF2804SPBFRochester Electronics |
HEXFET POWER MOSFET |
|
IPP147N12N3GRochester Electronics |
MOSFET N-CH 120V 56A TO220-3 |
|
APT32M80JRoving Networks / Microchip Technology |
MOSFET N-CH 800V 33A ISOTOP |
|
VP0109N3-GRoving Networks / Microchip Technology |
MOSFET P-CH 90V 250MA TO92-3 |