English
简体中文
MOSFET N-CH 100V 180A TO263-7
VIP USB3.1/GIGABIT-NET I/O BOARD
LED DRIVER AC/DC CC 25-44V 700MA
MOD BLOCK XHP35 4000K RECTANGLE
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 180A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 6V, 10V |
| rds on (max) @ id, vgs: | 2.4mOhm @ 90A, 10V |
| vgs(th) (最大值) @ id: | 3.8V @ 183µA |
| 栅极电荷 (qg) (max) @ vgs: | 138 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 10200 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 250W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TO263-7 |
| 包/箱: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STI10NM60NSTMicroelectronics |
MOSFET N-CH 600V 10A I2PAK |
|
IPB080N03LGATMA1Rochester Electronics |
PFET, 48A I(D), 30V, 0.0119OHM, |
|
IRF2804SPBFRochester Electronics |
HEXFET POWER MOSFET |
|
IPP147N12N3GRochester Electronics |
MOSFET N-CH 120V 56A TO220-3 |
|
APT32M80JRoving Networks / Microchip Technology |
MOSFET N-CH 800V 33A ISOTOP |
|
VP0109N3-GRoving Networks / Microchip Technology |
MOSFET P-CH 90V 250MA TO92-3 |
|
SI7326DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 6.5A PPAK 1212-8 |
|
DMN2024U-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 6.8A SOT23 T&R 3 |
|
AON6444Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 14A/81A 8DFN |
|
BSD214SNH6327Rochester Electronics |
BSD314 - 250V-600V SMALL SIGNAL/ |
|
RS1G150MNTBROHM Semiconductor |
MOSFET N-CH 40V 15A 8HSOP |
|
SQJA60EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 30A PPAK SO-8 |
|
XPH2R106NC,L1XHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 110A 8SOP |