







IPB031NE7 - 12V-300V N-CHANNEL P
CONN RCPT MALE 8POS GOLD CRIMP
MODULE DDR4 SDRAM 8GB 288RDIMM
IC DRAM 8GBIT 2.133GHZ 200WFBGA
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压(最大 rds on,最小 rds on): | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗(最大值): | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
RJK0393DPA-00#J53Rochester Electronics |
MOSFET N-CH 30V 40A 8WPAK |
|
|
RM80N30DFRectron USA |
MOSFET N-CHANNEL 30V 81A 8DFN |
|
|
SI7850ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 10.3A/12A PPAK |
|
|
APT5024BFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 22A TO247 |
|
|
FCH072N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 52A TO247-3 |
|
|
TSM3N100CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CH 1000V 2.5A TO252 |
|
|
ZXMP2120G4TAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 200V 200MA SOT223 |
|
|
TK42A12N1,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 120V 42A TO220SIS |
|
|
HUF76423D3Rochester Electronics |
MOSFET N-CH 60V 20A IPAK |
|
|
SI7149ADP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 50A PPAK SO-8 |
|
|
DMP4011SK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 14A/74A TO252 |
|
|
SI8810EDB-T2-E1Vishay / Siliconix |
MOSFET N-CH 20V 2.1A MICROFOOT |
|
|
2SK2701ASanken Electric Co., Ltd. |
MOSFET N-CH 450V 7A TO220F |