类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 1.5A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 110mOhm @ 2.5A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 7 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 250 pF @ 24 V |
场效应管特征: | - |
功耗(最大值): | 420mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23-3 (TO-236) |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
2SK4125Rochester Electronics |
MOSFET N-CH 600V 17A TO3PB |
|
FQP8N60CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 7.5A TO220-3 |
|
IPP052NE7N3GRochester Electronics |
IPP052NE7 - 12V-300V N-CHANNEL P |
|
IPS70R2K0CEAKMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 4A TO251-3 |
|
STB28NM60NDSTMicroelectronics |
MOSFET N-CH 600V 23A D2PAK |
|
IRFR110TRPBF-BE3Vishay / Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
|
2SK3234-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
RM45N600T7Rectron USA |
MOSFET N-CH 600V 44.5A TO247 |
|
NP40N055KLE-E1-AYRochester Electronics |
MOSFET N-CH 55V 40A TO263 |
|
CSD18511KCSTexas Instruments |
MOSFET N-CH 40V 194A TO220-3 |
|
SIR698DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 7.5A PPAK SO-8 |
|
IRLR8103VPBFRochester Electronics |
HEXFET POWER MOSFET |
|
SPP04N60C2Rochester Electronics |
N-CHANNEL POWER MOSFET |