类型 | 描述 |
---|---|
系列: | FDmesh™ II |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Not For New Designs |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 23A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 150mOhm @ 11.5A, 10V |
vgs(th) (最大值) @ id: | 5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 62.5 nC @ 10 V |
vgs (最大值): | ±25V |
输入电容 (ciss) (max) @ vds: | 2090 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 190W (Tc) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D2PAK |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRFR110TRPBF-BE3Vishay / Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
|
2SK3234-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
RM45N600T7Rectron USA |
MOSFET N-CH 600V 44.5A TO247 |
|
NP40N055KLE-E1-AYRochester Electronics |
MOSFET N-CH 55V 40A TO263 |
|
CSD18511KCSTexas Instruments |
MOSFET N-CH 40V 194A TO220-3 |
|
SIR698DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 7.5A PPAK SO-8 |
|
IRLR8103VPBFRochester Electronics |
HEXFET POWER MOSFET |
|
SPP04N60C2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
PMV45EN2215Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
DMT3006LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 16A PWRDI5060 |
|
SI4838DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 12V 17A 8SO |
|
STL25N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V 16A PWRFLAT HV |
|
RFD7N10LERochester Electronics |
N-CHANNEL POWER MOSFET |