English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 190mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 5V, 10V |
| rds on (max) @ id, vgs: | 4.5Ohm @ 100mA, 10V |
| vgs(th) (最大值) @ id: | 2.1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 0.43 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 20 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 265mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-236AB |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXFT14N80PWickmann / Littelfuse |
MOSFET N-CH 800V 14A TO268 |
|
FDZ206PRochester Electronics |
MOSFET P-CH 20V 13A 30BGA |
|
SPU07N60S5Rochester Electronics |
MOSFET N-CH 600V 7.3A TO251-3 |
|
IRFR9010TRLPBFVishay / Siliconix |
MOSFET P-CH 50V 5.3A DPAK |
|
RF4G060ATTCRROHM Semiconductor |
PCH -40V -6A POWER, DFN2020, MOS |
|
SSM3K337R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 38V 2A SOT23F |
|
SI4920DYRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
TPC6110(TE85L,F,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 4.5A VS-6 |
|
FDB8442Rochester Electronics |
MOSFET N-CH 40V 28A/80A TO263AB |
|
NTF2955T1GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
NVMFS5C468NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 5DFN |
|
IAUC100N04S6L025ATMA1IR (Infineon Technologies) |
IAUC100N04S6L025ATMA1 |
|
2SJ387L-ERochester Electronics |
P-CHANNEL POWER MOSFET |
