English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9A (Ta), 52A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 5.8mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 2.1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 22.2 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1252 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 760mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 5-DFN (5x6) (8-SOFL) |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMT68M8LFV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 54.1A PWRDI3333 |
|
SI4490DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 200V 2.85A 8SO |
|
BUK9606-55B,118Rochester Electronics |
MOSFET N-CH 55V 75A D2PAK |
|
DKI06186Sanken Electric Co., Ltd. |
MOSFET N-CH 60V 31A TO252 |
|
NTMFS4921NT1GRochester Electronics |
MOSFET N-CH 30V 8.8A/58.5A 5DFN |
|
AUIRFS6535Rochester Electronics |
MOSFET N-CH 300V 19A D2PAK |
|
IPP60R099CPRochester Electronics |
MOSFET N-CH 600V 31A TO220-3-1 |
|
BUK769R6-80E,118Rochester Electronics |
MOSFET N-CH 80V 75A D2PAK |
|
SFP9640LRochester Electronics |
MOSFET P-CH 200V 11A TO220-3 |
|
DMN6140LQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 1.6A SOT23 |
|
STF23NM60NDSTMicroelectronics |
MOSFET N-CH 600V 19.5A TO220FP |
|
TK31E60W,S1VXToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 30.8A TO220 |
|
IRFM220BTFRochester Electronics |
N-CHANNEL POWER MOSFET |
