English
简体中文
CAP ALUM 270UF 20% 500V SNAP-IN
MOSFET N-CH 60V 31A TO252
IC SRAM 128KBIT PARALLEL 64TQFP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 31A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 15mOhm @ 15.5A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 350µA |
| 栅极电荷 (qg) (max) @ vgs: | 23.7 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1510 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 37W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-252 |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTMFS4921NT1GRochester Electronics |
MOSFET N-CH 30V 8.8A/58.5A 5DFN |
|
AUIRFS6535Rochester Electronics |
MOSFET N-CH 300V 19A D2PAK |
|
IPP60R099CPRochester Electronics |
MOSFET N-CH 600V 31A TO220-3-1 |
|
BUK769R6-80E,118Rochester Electronics |
MOSFET N-CH 80V 75A D2PAK |
|
SFP9640LRochester Electronics |
MOSFET P-CH 200V 11A TO220-3 |
|
DMN6140LQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 1.6A SOT23 |
|
STF23NM60NDSTMicroelectronics |
MOSFET N-CH 600V 19.5A TO220FP |
|
TK31E60W,S1VXToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 30.8A TO220 |
|
IRFM220BTFRochester Electronics |
N-CHANNEL POWER MOSFET |
|
TK7A90E,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 900V 7A TO220SIS |
|
AON6278Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 80V 34A/85A 8DFN |
|
DI110N03PQDiotec Semiconductor |
MOSFET N-CH 30V 110A 8QFN |
|
AUIRLS3036TRLRochester Electronics |
MOSFET N-CH 60V 195A D2PAK |