English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 400 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5.5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1Ohm @ 3.3A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 22 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 600 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 74W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRLL3303PBFRochester Electronics |
MOSFET N-CH 30V 4.6A SOT223 |
|
BUK764R4-60E,118Nexperia |
MOSFET N-CH 60V 100A D2PAK |
|
CSD19538Q3ATexas Instruments |
MOSFET N-CH 100V 15A 8VSON |
|
IRFRC20TRLPBFVishay / Siliconix |
MOSFET N-CH 600V 2A DPAK |
|
5LN01C-TB-ERochester Electronics |
N-CHANNEL SMALL SIGNAL MOSFET, 5 |
|
IPB144N12N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 120V 56A D2PAK |
|
MCH3383-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 12V 3.5A SC70 |
|
IAUC120N06S5L032ATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 120A TDSON-8-34 |
|
RM2309ERectron USA |
MOSFET P-CHANNEL 30V SOT23 |
|
2SJ210-T1B-ARochester Electronics |
P-CHANNEL SMALL SIGNAL MOSFET |
|
IPA50R520CPXKSA1Rochester Electronics |
7A, 500V, 0.52OHM, N-CHANNEL, M |
|
FCU850N80ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 6A IPAK |
|
FDD6630ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 21A TO252 |
