类型 | 描述 |
---|---|
系列: | HiPerFET™, Polar3™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 300 V |
电流 - 连续漏极 (id) @ 25°c: | 94A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 36mOhm @ 47A, 10V |
vgs(th) (最大值) @ id: | 5V @ 4mA |
栅极电荷 (qg) (max) @ vgs: | 102 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 5510 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 1040W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247 |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SQJ420EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 30A PPAK SO-8 |
|
SFS9Z24Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
BUK7M6R0-40HXNexperia |
MOSFET N-CH 40V 50A LFPAK33 |
|
SIA449DJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 12A PPAK SC70-6 |
|
TK90S06N1L,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 90A TO252-3 |
|
T2N7002AK,LMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 200MA SOT23 |
|
NVTFS6H888NWFTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 4.7A/12A 8WDFN |
|
BUZ32HXKSA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
RM5A1P30S6Rectron USA |
MOSFET P-CH 30V 5.1A SOT23-6 |
|
TP2520N8-GRoving Networks / Microchip Technology |
MOSFET P-CH 200V 260MA TO243AA |
|
RUQ050N02HZGTRROHM Semiconductor |
MOSFET N-CH 20V 5A TSMT6 |
|
TPN22006NH,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 9A 8TSON |
|
E3M0120090JWolfspeed - a Cree company |
900V 120M AUTOMOTIVE SIC MOSFET |