P-CHANNEL SILICON MOSFET
CONN PLUG MALE 3POS GOLD CRIMP
CONN RCPT FMALE 43POS GOLD CRIMP
类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRF820Rochester Electronics |
2.5A, 500V, 3.000 OHM, N-CHANNEL |
|
IXTT500N04T2Wickmann / Littelfuse |
MOSFET N-CH 40V 500A TO268 |
|
TN2425N8-GRoving Networks / Microchip Technology |
MOSFET N-CH 25V 480MA SOT89-3 |
|
TK6A60W,S4VXToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 6.2A TO220SIS |
|
FDB86102LZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 8.3A/30A TO263 |
|
STH10N80K5-2AGSTMicroelectronics |
MOSFET N-CH 800V 8A H2PAK-2 |
|
FQI6N40CTURochester Electronics |
MOSFET N-CH 400V 6A I2PAK |
|
TPCA8064-H,LQ(CMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 20A 8SOP |
|
CPH6445-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 3.5A 6CPH |
|
RM6N800IPRectron USA |
MOSFET N-CHANNEL 800V 6A TO251 |
|
IAUC120N04S6L008ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 120A 8TDSON-33 |
|
IRF3709ZPBFRochester Electronics |
MOSFET N-CH 30V 87A TO220AB |
|
PMV25ENEARNexperia |
MOSFET N-CH 30V 5.5A TO236AB |